led chip glowing in the dark.jpg

Solutions for GaN power and RF

Surface defects in III-V optoelectronic devices are the pathway for considerable leakage currents and have a significant impact on photodetector performance (sensitivity, stn ratio, dark-current). As the size of optoelectronic devices decreases, the impact of surface recombination starts to play a very significant role.  

 

Kontrox eliminates most surface defects on mesa sidewalls for a significant improvement in device performance and power efficiency.

Power devices

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Yield improvement
+ xx%

Energy efficiency improvement + xx%

EQE increase
+ 300%

The display industry is coming to a major turning point due to high demand and unprecedented requirements of power efficiency and brightness driven by next-generation information displays, automotive, VR/AR, and IoT applications.  MicroLED technology is currently the only way for that transformation.

 

There are numerous obstacles to realizing a good quality, high yield, mass-production-ready micro-LED display. Poor efficiency at low current densities and variation of emission level between chips is one of the key issues that is directly related to the quality of the sidewalls of the chips and the high surface recombination effects. These effects become more prominent as the chip size gets smaller.

Kontrox forms a high-quality passivation layer with substantially reduced defect densities improving the micro LEDs power efficiency & brightness levels significantly

RF devices

This is a Paragraph. Click on "Edit Text" or double click on the text box to start editing the content.

Yield improvement
+ xx%

Energy efficiency improvement + xx%

EQE increase
+ 300%

The display industry is coming to a major turning point due to high demand and unprecedented requirements of power efficiency and brightness driven by next-generation information displays, automotive, VR/AR, and IoT applications.  MicroLED technology is currently the only way for that transformation.

 

There are numerous obstacles to realizing a good quality, high yield, mass-production-ready micro-LED display. Poor efficiency at low current densities and variation of emission level between chips is one of the key issues that is directly related to the quality of the sidewalls of the chips and the high surface recombination effects. These effects become more prominent as the chip size gets smaller.

Kontrox forms a high-quality passivation layer with substantially reduced defect densities improving the micro LEDs power efficiency & brightness levels significantly