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Solutions for GaN power and RF
Surface defects in III-V optoelectronic devices are the pathway for considerable leakage currents and have a significant impact on photodetector performance (sensitivity, stn ratio, dark-current). As the size of optoelectronic devices decreases, the impact of surface recombination starts to play a very significant role.
Kontrox eliminates most surface defects on mesa sidewalls for a significant improvement in device performance and power efficiency.
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