Solutions for GaN power and RF

Surface defects in III-V optoelectronic devices are the pathway for considerable leakage currents and have a significant impact on photodetector performance (sensitivity, stn ratio, dark-current). As the size of optoelectronic devices decreases, the impact of surface recombination starts to play a very significant role.  

 

Kontrox eliminates most surface defects on mesa sidewalls for a significant improvement in device performance and power efficiency.