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Passivation, GaN power, GaN RF

Kontrox for power and RF

Gallium nitride (GaN) is a wide bandgap semiconductor used for high-efficiency power transistors and integrated circuits. 

GaN is the leading candidate for taking electronic performance to the next level; its ability to conduct electrons more than 1000 times more efficiently than silicon, while being more affordable to manufacture has now been well established. 

With higher breakdown strength, faster-switching speed, higher thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices.  GaN has demonstrated the capability to be the displacement technology for silicon semiconductors in power conversion, RF, and analog applications.

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The semiconductor-dielectric interface plays a crucial role in semiconductor devices determining their performance. In compound semiconductor-based transistors, achieving sufficient interface quality is extremely difficult because of the aggressive oxidation.

In transistor applications, the passivation effect of Kontrox is evident when comparing III-V MIS capacitors produced with and without the Kontrox passivation layer for the technologically important InAs and AlGaN/GaN MIS structures. With capacitance-voltage (CV) measurements, a drastic reduction of frequency-dependent capacitance dispersion is achieved with Kontrox, both for arsenide- and nitride-based MIS structures. 

HR-TEM images from ALD Al2O3-GaAs(100) interface with and without  Kontrox treatment. The Kontrox-treated structure exhibits unprecedentedly low levels of surface defects and a sharp III-V dielectric interface.

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