Kontrox for power and RF
Gallium nitride (GaN) is a wide bandgap semiconductor used for high-efficiency power transistors and integrated circuits.
GaN is the leading candidate for taking electronic performance to the next level; its ability to conduct electrons more than 1000 times more efficiently than silicon, while being more affordable to manufacture has now been well established.
With higher breakdown strength, faster-switching speed, higher thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices. GaN has demonstrated the capability to be the displacement technology for silicon semiconductors in power conversion, RF, and analog applications.
The semiconductor-dielectric interface plays a crucial role in semiconductor devices determining their performance. In compound semiconductor-based transistors, achieving sufficient interface quality is extremely difficult because of the aggressive oxidation.
In transistor applications, the passivation effect of Kontrox is evident when comparing III-V MIS capacitors produced with and without the Kontrox passivation layer for the technologically important InAs and AlGaN/GaN MIS structures. With capacitance-voltage (CV) measurements, a drastic reduction of frequency-dependent capacitance dispersion is achieved with Kontrox, both for arsenide- and nitride-based MIS structures.
HR-TEM images from ALD Al2O3-GaAs(100) interface with and without Kontrox treatment. The Kontrox-treated structure exhibits unprecedentedly low levels of surface defects and a sharp III-V dielectric interface.
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