White paper:
Enabling next-generation
microLED displays 

Harmful oxidation-induced defects of the chip sidewalls are the key challenge in realizing a good quality, high yield mass-production ready microLED display. Poor-quality oxide at the microLED mesa sidewall and the related disorder-induced gap states are the biggest source of the SRH type of non-radiative recombination and leakage current. As a result, devices show diminished light output. Furthermore, LED efficiency as a function of the current density drops significantly with the decreasing chip size.


Learn the science behind the issue and a breakthrough solution that takes "an ultimate display" from concept to reality.


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