Leading-edge
compound semiconductor
surface engineering
& characterization

Turnkey III-V surface engineering solutions tailored to boost the performance of your device

Process development

Unlike silicon, which has naturally superior-quality oxide with a low defect state density interface, the III-V oxides have poor characteristics both from the structural- and the electronic structure- point of view; they are naturally characterized by atomic level bond disorder, dangling bonds, and mixed group III and group V oxides. These defects are the biggest source of the SRH type of non-radiative recombination and leakage current as well as  diminished light output in micro-LED devices.

 

Equipment

In order to speed up technology implementation into our customers' production lines, we collaborate with our partner RIBER who designs & manufactures reliable,

low-cost-of-ownership equipment that can be optimized for R&D or production. RIBER is a global market leader for semiconductor industry equipment. It designs and produces molecular beam epitaxy (MBE) systems as well as evaporation sources and cells for the semiconductor industry. 

Through RIBER we ensure access to high-end customized and efficient ultra-high vacuum equipment along with expert technical support and lifecycle management services.

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This collaboration covers the development of a modified version of Riber's proprietary process control software, Crystal XE®, optimized specifically for the Kontrox processes.

Technology transfer

Unlike silicon, which has naturally superior-quality oxide with a low defect state density interface, the III-V oxides have poor characteristics both from the structural- and the electronic structure- point of view; they are naturally characterized by atomic level bond disorder, dangling bonds, and mixed group III and group V oxides. These defects are the biggest source of the SRH type of non-radiative recombination and leakage current as well as  diminished light output in micro-LED devices.

 
 

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