We gladly announce that Comptek Solutions has recently been awarded with a R&D grant from the Finnish public institution "Business Finland" (www.businessfinland.fi) for a one year project focused on the study and the implementation of Kontrox™ technology into GaN based devices.
Nitride based compound semiconductors , GaN / AlGAN / InGaN , are well known materials that have been used in LED technology for years and that now, due to their various advantageous properties, such as high breakdown voltage, wider band gap, large critical electric field, and high thermal conductivity, they are rapidly replacing the existing silicon technology for power semiconductor applications.
GaN based devices can operate at higher voltages, high-power density, and high switching frequencies thus they offer improved power efficiency over pure silicon-based devices.
The growing demand for Internet-of-Things (IoT) , the adoption of 5G technology and the fast growing Electrical vehicles market are driving the increasing demand for GaN-based semiconductor devices, making its market the fastest growing semiconductor material market.
Despite of the overwhelming properties of the GaN materials, there are still several technical challenges that require improvements in their processing technologies. Comptek will focus in one critical area of development: the effective passivation of the surface of these materials to lower the amount of surface-state traps, which will result in considerable improvements in device efficiency.
Our proprietary technology Kontrox™ has been proven to achieve record levels of low Defect states densities for many III-V materials, and the preliminary results on Nitrides are showing very interesting results.
One of the targets of this project is to implement Kontrox™ into several GaN based devices such as HEMT structures for power applications and also into optoelectronic devices such as LED structures.
If you are interested in knowing more, ålease contact our CTO, Dr. Jouko Lång. Jouko.firstname.lastname@example.org