Comptek Solutions Oy

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20520 Turku, Finland

Business ID: 2815285-8

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info@comptek-solutions.com

+358442404004

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Selected publications by the team

J. Mäkelä, M. Tuominen, M. Kuzmin, M. Yasir, J. Lång, M. Punkkinen, P. Laukkanen, K. Kokko, K. Schulte, J. Osiecki, R. Wallace: “Line-shape and composition of the In 3d5/2 core-level photoemission for the interface analysis of In-containing III-V semiconductors”. Applied Surface Science, 329, 371 (2015).

 

M. Tuominen, M. Yasir, J. Lång, J. Dahl, M. Kuzmin, J. Mäkelä, M. Punkkinen, P. Laukkanen, K. Kokko, K. Schulte, R. Punkkinen, V-M. Korpijärvi, V. Polojärvi, M. Guina: ”Oxidation of GaAs semiconductor at the Al2O3 junction”. Physical Chemistry Chemical Physics, 17 (2015).

 

M. Tuominen, J. Lång, J. Dahl, M. Kuzmin, M. Yasir, J. Mäkelä, J. Osiecki, K. Schulte, M. Punkkinen, P. Laukkanen, K. Kokko:

” Oxidized crystalline (3 × 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy” . Applied Physics Letters, 106, 011606 (2015).    

 

 

M. Kuzmin, P. Laukkanen, M. P. J. Punkkinen, M. Yasir, M. Tuominen, J. Dahl, J. J. K. Lång, J. Mäkelä, and K. Kokko: ”Atomic structure and thermally induced transformation of the crystalline BaO/Si(100) junction”, Physical Review B 90, 235405 (2015). 

 

 

 

J. J. K. Lång, M. Tuominen, M. P. J. Punkkinen, H-.P. Hedman, M. Vähä-Heikkilä, V. Polojärvi, J. Salmi, V.-M. Korpijärvi, K. Schulte, M. Kuzmin, M. Guina, K. Kokko, R. Punkkinen, and P. Laukkanen: “Unveiling and controlling the electronic structure of oxidized semiconductor surfaces: Crystalline oxidized InSb(100)(1×2)-O”. Physical Review B, 90, 045312 (2014).

 

 

M. Kuzmin, M. P. J. Punkkinen, P. Laukkanen, J.J.K. Lång, J. Dahl, L. Vitos, and K. Kokko: ”Atomic-level understanding of interfaces in the synthesis of crystalline oxides on semiconductors: Sr- and Ba/Si(100)(2×3) reconstructions” J. Phys. Chem. C. 118, 1894-1902 (2014).

 

M. Yasir, J. Dahl, M. Kuzmin, J. Lång, M. Tuominen, M. P. J. Punkkinen, P. Laukkanen, K. Kokko, V.-M. Korpijärvi, V. Polojärvi, and, M. Guina: ”Growth and properties of crystalline barium oxide on the GaAs(100) susbstrate.” Applied Physics Letters, 103, 191601 (2013).

 

P. Laukkanen, J. J. K. Lång, M. P. J. Punkkinen, M. Tuominen, J. Dahl, V. Tuominen, K. Kokko, J. Adell, J. Sadowski, and M. Kuzmin: “Synthesis and Characterization of Monocrystalline Tin-Oxide Thin Films on III-V Compound Semiconductor”. Advanced materials 12/2013

 

P. Laukkanen, M.P.J. Punkkinen, J. Puustinen, H. Levämäki, M. Tuominen, K. Schulte, J. Dahl, J. Lång, H. L. Zhang, M. Kuzmin, K. Palotas, B. Johansson, L. Vitos, M. Guina, and K. Kokko: “Formation and destabilization of Ga interstitials in GaAsN: Experiment and theory”. Physical Review B 86, 195205 (2012).

 

M.P.J. Punkkinen, P. Laukkane, J. Lång, M. Kuzmin, J. Dahl, H.L. Zhang, M. Pessa, M. Guina, L. Vitos, and K. Kokko: “Structure of ordered oxide on InAs(100) surface”. Surface Science, 606, 1837-1841 (2012).

 

  

M. P. J. Punkkinen, P. Laukkanen, J. Lång, M. Kuzmin, M. Tuominen, V. Tuominen, J. Dahl, M. Pessa, M. Guina, K. Kokko, J. Sadowski, B. Johansson, I. J. Väyrynen, and L. Vitos: “Oxidized In-containing III-V(100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interface”, Physical Review B 83, 195329 (2011).

 

P. Laukkanen, M. P. J. Punkkinen, J. Lång, M. Tuominen, M. Kuzmin,  V. Tuominen, J. Dahl, J. Adell, J. Sadowski, J. Kanski, V. Polojärvi, J. Pakarinen, K. Kokko, M. Guina, M. Pessa, and I. J. Väyrynen: “Ultrathin (1×2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides”. Applied Physics Letters 98, 231908 (2011).

  

 

J. J. K. Lång, M. P. J. Punkkinen, P. Laukkanen, M. Kuzmin, V. Tuominen, M. Pessa, M. Guina, I. J. Väyrynen, K. Kokko, B. Johansson and L. Vitos: “Ab initio and scanning tunneling microscopy study of indium-terminated GaAs(100) surface: An indium induced surface reconstruction change in the c(8×2) structure.” Physical Review B 81, 245305 (2010).

 

V. Polojärvi, J. Salmi,  A. Schramm, A. Tukiainen, M. Guina, J. Pakarinen, E. Arola, J. Lång, I. J. Väyrynen, and P. Laukkanen: “Effects of (NH4)2S and NH4OH surface treatments prior to SiO2 capping and thermal annealing on 1.3 μm GaInAsN/GaAs quantum well structures”. Applied Physics Letters 97, 111109 (2010).