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Untreated semiconductor surface exhibits a large number of oxidation-induced defects
These atomic-level defects are ultimately an amorphous oxide and contaminations on top of the III-V crystal. This native oxide is naturally characterized by atomic-level bond disorder, dangling bonds, and mixed group III and group V oxides
III-V semiconductor surfaces exhibit high defect state densities due to the harmful native oxides that form as soon as the material is exposed to air. This leads to drastic deterioration of the device performance.
Thanks to the extensive expertise in semiconductor surface engineering, our team has developed Kontrox - a breakthrough technology to address native oxidation in compound semiconductor materials.
With precise, atomic-level control of the oxidation process, we can form an extremely high-quality semiconductor surface that is highly resistant to further oxidation.
With Kontrox, the efficiency and performance of III-V semiconductor devices are taken to record levels while manufacturing costs are significantly reduced.
Scope of applicability
Kontrox provides high-quality passivation in a wide range of III-V semiconductor materials and device types. The technology is ready for commercialization for the materials listed below. However, technology applicability extends beyond those, and we are available for implementation studies for other III-V materials and device types.
Contact us for more information.
Optoelectronics
• Mesa sidewall passivation
• Barrier layer in QW stack
• Facet passivation
CMOS
• Key enabler for III-V MOS-based transistors for gate dielectric interface passivation
RF & Power Electronics
• Interface passivation layer for MOS-HEMT
Laser diodes
LED
CPV
IR detectors
MOS III-V
p-HEMT
m-HEMT
GaN
GaAs
AIGaAs
InAlGaAs
InGaAs
InP
GalnP
AlGaInP
GaN
AIGaN
InGaN
GaAs
AlGaP
AIGaInP
GaP
AIInP
GalnP
GaInNAsSb
GaAs
InGaAs
AlGaInP
AlGaAs
GaAs
InGaAs
InSb
InP
GaSb
InAs
InGaAs
InSb
InP
InGaAs
GaInP
GaN
AlGaN
InGaN
GaAs
AIGaAs
GaInP
InGaAs
