III-V semiconductor surfaces exhibit high defect state densities due to the harmful native oxides that form as soon as the material is exposed to air. This leads to drastic deterioration of the device performance.

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Thanks to the extensive expertise in semiconductor surface engineering, our team has developed Kontrox - a breakthrough technology to address native oxidation in compound semiconductor materials.

With precise, atomic-level control of the oxidation process, we can form an extremely high-quality semiconductor surface that is highly resistant to further oxidation. 

With Kontrox, the efficiency and performance of III-V semiconductor devices are taken to record levels while manufacturing costs are significantly reduced.