98 % reduction of interface defect state density compared to existing methods
III-V semiconductor materials tend to exhibit high surface state densities due to the formation of native oxides. This leads to harmful physical phenomena like Fermi-level pinning and surface recombination which deteriorate the device performance in microelectronic and optoelectronic fields. For example, the surface states will cause charge carrier losses and decrease the photoelectric conversion efficiency in solar cells and detectors; In the semiconductor lasers, the surface states in the facets of laser cavity will cause unwanted absorption of the laser light and reduce the laser emission efficiency and even leads to catastrophic optical mirror damage; In metal oxide semiconductor field-effect transistors (MOSFET) the surface state will cause poor channel modulation, gate leakage, C-V dispersion, and hysteresis.
Thanks to the extensive expertise in semiconductor surface engineering, our team has developed a breakthrough technology to address the problem of native oxidation in compound semiconductor materials. We make the oxidation happen in a highly controlled manner so that the resulting surface is more resistant to oxidation. For the first time, we can promote surface crystalline oxide reconstructions on the surface of the III-V compound semiconductor materials.
Untreated semiconductor surface exhibits a large number of oxidation-induced defects
These atomic-level defects are ultimately an amorphous oxide and contaminations on top of the III-V crystal. This native oxide is naturally characterized by atomic-level bond disorder, dangling bonds, and mixed group III and group V oxides
Scanning Tunneling Microscope (STM) images of III-V native oxide surface layer (top) and crystalline oxide reconstruction developed by Comptek Solutions (bottom)
With Kontrox, the efficiency and performance of compound semiconductor devices are taken to record levels while manufacturing costs are significantly reduced.
Novel crystalline structures formed with Kontrox are thermodynamically stable and are characterized by unprecedentedly low levels of surface state densities. Additionally, Kontrox helps to avoid the oxidation of the materials during the subsequent manufacturing phases reducing the risk of defective parts and improving the manufacturing yields.
Scope of applicability
Kontrox provides high-quality passivation in a wide range of III-V semiconductor materials and device types. The technology is ready for commercialization for the materials listed below. However, technology applicability extends beyond those, and we are available for implementation studies for other III-V materials and device types.
Contact us for more information.
• Mesa sidewall passivation
• Barrier layer in QW stack
• AR coating interface passivation
• Protective layer during processing
• Facet passivation
• Key enabler for III-V MOS based transistors for gate dielectric interface passivation
RF & Power Electronics
• Interface passivation layer for MOS-HEMT