III-V semiconductor materials such as GaAs, GaN, InGaAs, GaSb, InP, InAs, or InSb present high surface state densities due to the formation of native oxides. This leads to harmful physical phenomena like Fermi-level pinning and surface recombination which deteriorate the device performance in microelectronic and optoelectronic fields. For example, the surface states will cause charge carrier losses and decrease the photoelectric conversion efficiency in solar cells and detectors; In the semiconductor lasers, the surface states in the facets of laser cavity will cause unwanted absorption of the laser light and reduce the laser emission efficiency and even leads to catastrophic optical mirror damage; In metal oxide semiconductor field-effect transistors (MOSFET) the surface state will cause poor channel modulation, gate leakage, C-V dispersion, and hysteresis.

Thanks to the extensive expertise in semiconductor surface engineering, our team has developed a breakthrough technology to address the problem of native oxidation in compound semiconductor materials. We make the oxidation happen in a highly controlled manner so that the resulting surface is more resistant to oxidation. For the first time, we can promote surface crystalline oxide reconstructions on the surface of the III-V compound semiconductor materials. 

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With Kontrox, the efficiency and performance of compound semiconductor devices are taken to record levels while manufacturing costs are significantly reduced.

These novel crystalline structures are thermodynamically stable which results in the passivation effect. They are characterized by unprecedented low levels of surface state densities. These properties narrow down the gap between theoretical and actual efficiency. Additionally, our solution helps to avoid the oxidation of the materials during the different manufacturing phases reducing the risk of defective parts and improving the manufacturing yields.

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