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Advanced PL measurement techniques for optoelectronic device characterization

When working with advanced optoelectronic devices such as µLEDs, utilizing different characterization techniques is required in order to gain a deeper insight on the factors defining the device performance and to understand the complex physical phenomena prevailing in the semiconductor devices/structures. Typically, non-destructive spectroscopic methods, such as photoluminescence (PL) spectroscopy, are utilized to assess the LED emission wavelength and intensity characteristics and -uniformity. This information is normally combined with electroluminescence (EL) measurements, to analyze the device quality and the performance distribution within the wafer.

Conventional PL measurements often do not provide sufficient information about the important recombination mechanisms and more sophisticated techniques such as time-resolved photoluminescence (TRPL) are required to develop the next-generation LED chips.

 µLED PL measument - FLIM maps
Mean lifetime FLIM maps of a microLED, deconvoluted from TCSPC measurements

At Comptek, leveraging various advanced measurement techniques is crucial for understanding the properties of devices to develop the most optimal passivation process variant for each customer sample. Techniques like TRPL also are crucial for providing in-depth analysis of process KPIs and are an essential part of every customer project.

Learn about advanced PL techniques like TCSPC and FLIM and their implementation on state-of-the art µLED devices in our white paper.


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